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RF, DC, and reliability characteristics of ALD HfO2-Al2O3 laminate MIM capacitors for Si RF IC applications
- Source :
- IEEE Transactions on Electron Devices. June, 2004, Vol. 51 Issue 6, p886, 9 p.
- Publication Year :
- 2004
-
Abstract
- Metal-insulator-metal (MIM) capacitors using atomic layer-deposited (ALD) HfO2-Al2O3 laminate are fabricated and characterized for RF (radio frequency) and mixed-signal applications. Effects of constant voltage linearity and dependences of quadratic voltage coefficient of capacitance (alpha) on frequency and thickness are demonstrated.
Details
- Language :
- English
- ISSN :
- 00189383
- Volume :
- 51
- Issue :
- 6
- Database :
- Gale General OneFile
- Journal :
- IEEE Transactions on Electron Devices
- Publication Type :
- Academic Journal
- Accession number :
- edsgcl.122094063