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High-k Al2O3 gate dielectrics prepared by oxidation of aluminum film in nitric acid followed by high-temperature annealing
- Source :
- IEEE Transactions on Electron Devices. June, 2004, Vol. 51 Issue 6, p854, 5 p.
- Publication Year :
- 2004
-
Abstract
- An aluminum oxide (Al2O3) gate dielectric is prepared by oxidation of ultrathin Al film in nitric acid (HNO3) at room temperature then followed by high-temperature annealing in O2 and N2. It was shown that the Al2O3 gate dielectrics with initial oxide exhibit better electrical properties than those without oxide.
Details
- Language :
- English
- ISSN :
- 00189383
- Volume :
- 51
- Issue :
- 6
- Database :
- Gale General OneFile
- Journal :
- IEEE Transactions on Electron Devices
- Publication Type :
- Academic Journal
- Accession number :
- edsgcl.122093292