Diagnostic and analytical study on a low-pressure limit of diamond chemical vapor deposition in inductively coupled CO-CH(sub 4)-H(sub 2) plasmas

Plasma diagnostics and kinetic rate analysis for radicals is used for studying the role of neutral radicals and charged ions in a low pressure limit diamond chemical vapor deposition in CO-CH(sub 4)-H(sub 2) plasmas, which are coupled inductively. The results show radical fluxes limit the nucleation and modify the dynamic effects of energetic ions.