Study of GaN light-emitting diodes fabricated by laser lift-off technique

The fabrication process and performance characteristics of the laser lift-off (LLO) GaN light-emitting diodes were studied using the LLO-GaN LEDs, which were fabricated by lifting-off the GaN LED wafer structure from sapphire substrate and transferring it to a copper substrate. The comparison between copper and sapphire substrates regarding the emission wavelength shift with operating current data indicated that LLO-LEDs on copper showed an improvement in heat dissipation capacities as compared to those on sapphire.