Device characteristics of the 3-D BiCMOS technology using selective epitaxial growth and lateral solid phase epitaxy

Authors :: Liu, Haitao
Kumar, Mahender
Sin, Johnny K.O.
Source :: IEEE Transactions on Electron Devices. Dec, 2002, Vol. 49 Issue 12, p2359, 4 p.
Publication Year :: 2002
Abstract: The device properties of the BiCMOS technology using selective epitaxial growth (SG) and lateral solid phase epitaxy (LSPE) are described. The 3-D BiCMOS technology is useful for lower power, high-density and high-speed integrated circuits (ICs) applications.

Subjects :: Semiconductor chips -- Analysis
Semiconductor chips -- Structure
Integrated circuits -- Analysis
Integrated circuits -- Structure
Epitaxy -- Analysis
BiCMOS -- Analysis
BiCMOS -- Properties
Standard IC
Business
Electronics
Electronics and electrical industries

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