Very high-efficiency and low voltage phosphorescent organic light-emitting diodes based on a P-I-N junction

Authors :: He, Gufeng
Schneider, Oliver
Qin, Dashan
Zhou, Xiang
Pfeiffer, Martin
Leo, Karl
Source :: Journal of Applied Physics. May 15, 2004, Vol. 95 Issue 10, 5773-5777
Publication Year :: 2004
Abstract: The study conducted on green phosphorescent organic light-emitting devices (OLEDS) employing tris (2-phenylpyridine) iridium doped in energy gap hole transport host with different thickness of emission layer is presented. The modifications done on P-I-N device structure to obtain maximum power efficiency and low operating voltages is described.

Subjects :: Iridium -- Usage
Iridium -- Analysis
Light-emitting diodes -- Analysis
Light-emitting diodes -- Optical properties
Physics

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