Thermal analysis of AlGaN--GaN power HFETs

In this paper, we present a thermal analysis of AlGaN-GaN power heterojunction field-effect transistors (HFETs). We report the de, small-signal, large-signal, and noise performances of AlGaN-GaN HFETs at high temperatures. The temperature coefficients measured for GaN HFETs are lower than that of GaAs pseudomorphic high electron-mobility transistors, confirming the potential of GaN for high-temperature applications. In addition, the impact of thermal effects on the device de, small-signal, and large-signal characteristics is quantified using a set of pulsed and continuous wave measurement setups. Finally, a thermal model of a GaN field-effect transistor is implemented to determine design rules to optimize the heat flow and overcome self-heating. Arguments from a device, circuit, and packaging perspective are presented. Index Terms--AlGaN-GaN heterojunction field-effect transistors (HFETs), high temperature, microwave, thermal effect, thermal modeling.