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Temperature dependence of impact ionization in GaAs
- Source :
- IEEE Transactions on Electron Devices. Oct, 2003, Vol. 50 Issue 10, p2027, 5 p.
- Publication Year :
- 2003
-
Abstract
- The temperature of electron and hole impact ionization in gallium arsenide (GaAs) is examined and discussed.
- Subjects :
- Semiconductor device
Business
Electronics
Electronics and electrical industries
Subjects
Details
- Language :
- English
- ISSN :
- 00189383
- Volume :
- 50
- Issue :
- 10
- Database :
- Gale General OneFile
- Journal :
- IEEE Transactions on Electron Devices
- Publication Type :
- Academic Journal
- Accession number :
- edsgcl.110260591