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Static characteristics of a-Si:H dual-gate TFTs

Authors :
Servati, Peyman
Karim, Karim S.
Nathan, Arokia
Source :
IEEE Transactions on Electron Devices. April, 2003, Vol. 50 Issue 4, p926, 7 p.
Publication Year :
2003

Abstract

The effect of the top gate on the static characteristics of dual-gate hydrogenated amorphous silicon (a-Si:H) thin-film transistors (TFT) is investigated and reported.

Subjects

Subjects :
Thin film devices -- Research
Transistors -- Research
Business
Electronics
Electronics and electrical industries

Details

Language :
English
ISSN :
00189383
Volume :
50
Issue :
4
Database :
Gale General OneFile
Journal :
IEEE Transactions on Electron Devices
Publication Type :
Academic Journal
Accession number :
edsgcl.109178082

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