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Slow transients observed in AlGaN/GaN HFETs: effects of SiN[subscript x] passivation and UV illumination
- Source :
- IEEE Transactions on Electron Devices. April, 2003, Vol. 50 Issue 4, p886, 8 p.
- Publication Year :
- 2003
-
Abstract
- Research involving s low transients observed in AlGaN/GaN HFETs that are subjected to high bias stress is described and discussed.
Details
- Language :
- English
- ISSN :
- 00189383
- Volume :
- 50
- Issue :
- 4
- Database :
- Gale General OneFile
- Journal :
- IEEE Transactions on Electron Devices
- Publication Type :
- Academic Journal
- Accession number :
- edsgcl.109170654