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High-field effects in silicon nitride passivated GaN MODFETs
- Source :
- IEEE Transactions on Electron Devices. May, 2003, Vol. 50 Issue 5, p1163, 8 p.
- Publication Year :
- 2003
-
Abstract
- Research involving high-field effects in GaN MODFETs is described.
- Subjects :
- Semiconductor device
Business
Electronics
Electronics and electrical industries
Subjects
Details
- Language :
- English
- ISSN :
- 00189383
- Volume :
- 50
- Issue :
- 5
- Database :
- Gale General OneFile
- Journal :
- IEEE Transactions on Electron Devices
- Publication Type :
- Academic Journal
- Accession number :
- edsgcl.109129980