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Renesas memory cell mixes SRAM, DRAM tech -- Size reduction, fewer soft errors among advantages claimed for 'SuperSRAM'

Authors :
Hara, Yoshiko
Source :
Electronic Engineering Times. Sept 22, 2003, p40
Publication Year :
2003

Subjects

Subjects :
Semiconductor memory
Microprocessor upgrade
Microprocessor
Renesas Technology Corp. -- Product development
Memory (Computers) -- Innovations
Microprocessors -- Product development

Details

Language :
English
ISSN :
01921541
Database :
Gale General OneFile
Journal :
Electronic Engineering Times
Publication Type :
Periodical
Accession number :
edsgcl.108003696

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