Back to Search
Start Over
Charging Effect by Fluorine-Treatment and Recess Gate for Enhancement-Mode on AlGaN/GaN High Electron Mobility Transistors
- Source :
- Nanomaterials, Vol 10, Iss 11, p 2116 (2020)
- Publication Year :
- 2020
- Publisher :
- MDPI AG, 2020.
-
Abstract
- An enhancement-mode AlGaN/GaN metal-insulator-semiconductor high-electron- mobility-transistor was fabricated using a recess gate and CF4 plasma treatment to investigate its reliable applicability to high-power devices and circuits. The fluorinated-gate device showed hysteresis during the DC current-voltage measurement, and the polarity and magnitude of hysteresis depend on the drain voltage. The hysteresis phenomenon is due to the electron trapping at the Al2O3/AlGaN interface and charging times longer than milliseconds were obtained by pulse I-V measurement. In addition, the subthreshold slope of the fluorinated-gate device was increased after the positive gate bias stress because of the two-dimensional electron gas reduction by ionized fluorine. Our systematic observation revealed that the effect of fluorine ions should be considered for the design of AlGaN/GaN power circuits.
- Subjects :
- AlGaN/GaN HEMTs
enhancement-mode
fluorinated-gate
recessed gate
Chemistry
QD1-999
Subjects
Details
- Language :
- English
- ISSN :
- 20794991
- Volume :
- 10
- Issue :
- 11
- Database :
- Directory of Open Access Journals
- Journal :
- Nanomaterials
- Publication Type :
- Academic Journal
- Accession number :
- edsdoj.fe8bc6099d2b4c19bc414e2ed09b6d2e
- Document Type :
- article
- Full Text :
- https://doi.org/10.3390/nano10112116