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Solid Phase Epitaxy of Single Phase Two-Dimensional Layered InSe Grown by MBE

Authors :
Chia-Hsing Wu
Yu-Che Huang
Yen-Teng Ho
Shu-Jui Chang
Ssu-Kuan Wu
Ci-Hao Huang
Wu-Ching Chou
Chu-Shou Yang
Source :
Nanomaterials, Vol 12, Iss 14, p 2435 (2022)
Publication Year :
2022
Publisher :
MDPI AG, 2022.

Abstract

Single-phase two-dimensional (2D) indium monoselenide (γ-InSe) film is successfully grown via solid phase epitaxy in the molecular beam epitaxy (MBE) system. Having high electron mobility and high photoresponsivity, ultrathin 2D γ-InSe semiconductors are attractive for future field-effect transistor and optoelectronic devices. However, growing single-phase γ-InSe film is a challenge due to the polymorphic nature of indium selenide (γ-InSe, α-In2Se3, β-In2Se3, γ-In2Se3, etc.). In this work, the 2D α-In2Se3 film was first grown on a sapphire substrate by MBE. Then, the high In/Se ratio sources were deposited on the α-In2Se3 surface, and an γ-InSe crystal emerged via solid-phase epitaxy. After 50 min of deposition, the initially 2D α-In2Se3 phase was also transformed into a 2D γ-InSe crystal. The phase transition from 2D α-In2Se3 to γ-InSe was confirmed by Raman, XRD, and TEM analysis. The structural ordering of 2D γ-InSe film was characterized by synchrotron-based grazing-incidence wide-angle X-ray scattering (GIWAXS).

Details

Language :
English
ISSN :
20794991
Volume :
12
Issue :
14
Database :
Directory of Open Access Journals
Journal :
Nanomaterials
Publication Type :
Academic Journal
Accession number :
edsdoj.fe8244a58bc14d63b0f00eeb5d493099
Document Type :
article
Full Text :
https://doi.org/10.3390/nano12142435