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Fabrication of high-aspect-ratio double-slot photonic crystal waveguide in InP heterostructure by inductively coupled plasma etching using ultra-low pressure

Authors :
Kaiyu Cui
Yongzhuo Li
Xue Feng
Yidong Huang
Wei Zhang
Source :
AIP Advances, Vol 3, Iss 2, Pp 022122-022122 (2013)
Publication Year :
2013
Publisher :
AIP Publishing LLC, 2013.

Abstract

Double-slot photonic crystal waveguide (PCW) in InP heterostructure is fabricated by inductively coupled plasma (ICP) etching. Due to using an ultra-low pressure of 0.05 Pa, etch depths up to 3.5 μm for holes with diameter of 200 nm and 1.8 μm for slots of ∼40 nm are achieved, which indicate a record-high aspect-ratio, i.e. 45, for such narrow slots in InP heterostructure. Moreover, etching quality is evaluated based on both the transmission performance and the linewidth of micro-photoluminescence (μ-PL). In our measurement, a structure-dependent transmission-dip about 17 dB is obtained from a 17-μm-long W3 PCW, and a PL widening as small as 19 nm compared to the corresponding wafer is observed. These promising experimental results evidence the high etching quality realized in this work and confirm the feasibility of etching small-feature-size patterns by ICP technology for InP based devices in future mono-/hetero-integrated photonic circuits.

Subjects

Subjects :
Physics
QC1-999

Details

Language :
English
ISSN :
21583226
Volume :
3
Issue :
2
Database :
Directory of Open Access Journals
Journal :
AIP Advances
Publication Type :
Academic Journal
Accession number :
edsdoj.fca42b8fbb104b408b54f022e1ede6a5
Document Type :
article
Full Text :
https://doi.org/10.1063/1.4793082