High-Performance P-Type Germanium Tri-Gate FETs via Green Nanosecond Laser Crystallization and Counter Doping for Monolithic 3-D ICs

MLA

Hao-Tung Chung, et al. “High-Performance P-Type Germanium Tri-Gate FETs via Green Nanosecond Laser Crystallization and Counter Doping for Monolithic 3-D ICs.” IEEE Journal of the Electron Devices Society, vol. 11, Jan. 2023, pp. 262–68. EBSCOhost, https://doi.org/10.1109/JEDS.2023.3270634.

APA

Hao-Tung Chung, Yu-Ming Pan, Nein-Chih Lin, Bo-Jheng Shih, Chih-Chao Yang, Chang-Hong Shen, Huang-Chung Cheng, & Kuan-Neng Chen. (2023). High-Performance P-Type Germanium Tri-Gate FETs via Green Nanosecond Laser Crystallization and Counter Doping for Monolithic 3-D ICs. IEEE Journal of the Electron Devices Society, 11, 262–268. https://doi.org/10.1109/JEDS.2023.3270634

Chicago

Hao-Tung Chung, Yu-Ming Pan, Nein-Chih Lin, Bo-Jheng Shih, Chih-Chao Yang, Chang-Hong Shen, Huang-Chung Cheng, and Kuan-Neng Chen. 2023. “High-Performance P-Type Germanium Tri-Gate FETs via Green Nanosecond Laser Crystallization and Counter Doping for Monolithic 3-D ICs.” IEEE Journal of the Electron Devices Society 11 (January): 262–68. doi:10.1109/JEDS.2023.3270634.