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Single flake homo p–n diode of MoTe2 enabled by oxygen plasma doping
- Source :
- Nanotechnology Reviews, Vol 13, Iss 1, Pp 3617-25 (2024)
- Publication Year :
- 2024
- Publisher :
- De Gruyter, 2024.
-
Abstract
- Two-dimensional (2D) materials play a crucial role as fundamental electrical components in modern electronics and optoelectronics next-generation artificial intelligent devices. This study presents a methodology for creating a laterally uniform p–n junction by using a partial oxygen plasma-mediated strategy to introduce p-type doping in single channel MoTe2 device. The MoTe2 field effect transistors (FETs) show high electron mobility of about ∼23.54 cm2 V−1 s−1 and a current ON/OFF ratio of ∼106 while p-type FETs show hole mobility of about ∼9.25 cm2 V−1 s−1 and current ON/OFF ratio ∼105 along with artificially created lateral MoTe2 p–n junction, exhibited a rectification ratio of ∼102 and ideality factor of ∼1.7 which is proximity to ideal-like diode. Thus, our study showed a diversity in the development of low-power nanoelectronics of next-generation integrated circuits.
Details
- Language :
- English
- ISSN :
- 21919097
- Volume :
- 13
- Issue :
- 1
- Database :
- Directory of Open Access Journals
- Journal :
- Nanotechnology Reviews
- Publication Type :
- Academic Journal
- Accession number :
- edsdoj.f39f0d3a1b6a41f3828c9cdd59b1611c
- Document Type :
- article
- Full Text :
- https://doi.org/10.1515/ntrev-2023-0207