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Structural, optical, and electrical properties of V2O5 thin films: Nitrogen implantation and the role of different substrates

Authors :
Bhanu Priya
Priya Jasrotia
Arun Kumar
Vinamrita Singh
Jehova Jire L. Hmar
Raj Kumar
Pawan Kumar Kulriya
Tanuj Kumar
Source :
Frontiers in Materials, Vol 9 (2022)
Publication Year :
2022
Publisher :
Frontiers Media S.A., 2022.

Abstract

This report investigates the effect of substrate and nitrogen (16 keV N+) ion implantation on the structural, morphological, compositional, and electrical properties of V2O5 thin films which are grown by thermal evaporation on various substrates, including glass, Si, and sapphire (termed V2O5:Gl, V2O5:Si, and V2O5:Sp, respectively). Structural analysis showed the formation of the mixed (α, and β-V2O5) phases on all substrates; however, the β-V2O5 phase is highly dominant in the V2O5:G and V2O5:Si samples. A deformation in the β-phase of V2O5 thin film under ion implantation-induced strain results in a change of crystallite size. Irradiation suppresses XRD peaks in relative intensities, indicating partial amorphization of the film with defect formation. Microstructural analysis confirmed the formation of uniform-sized nanorods for V2O5:Si, whereas isolated crystallites were formed for other types of substrates. Thermal conductivity may influence the size and shapes of V2O5 crystallite forms on different surfaces. Silicon absorbs heat more effectively than sapphire or glass, resulting in nanorod formation. A decrease in optical bandgap and electrical conduction has been observed due to increased oxygen vacancies, induced electron scattering, and trapping centres on N+ implantation. The present study thus offers the unique advantage of simultaneous reduction in optical band-gap and conductance of V2O5 thin films, which is important for optoelectronic applications.

Details

Language :
English
ISSN :
22968016
Volume :
9
Database :
Directory of Open Access Journals
Journal :
Frontiers in Materials
Publication Type :
Academic Journal
Accession number :
edsdoj.f2a8ecc1eed443e59c26eba94de24916
Document Type :
article
Full Text :
https://doi.org/10.3389/fmats.2022.1049189