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Harnessing Quantum Capacitance in 2D Material/Molecular Layer Junctions for Novel Electronic Device Functionality

Authors :
Bhartendu Papnai
Ding-Rui Chen
Rapti Ghosh
Zhi-Long Yen
Yu-Xiang Chen
Khalil Ur Rehman
Hsin-Yi Tiffany Chen
Ya-Ping Hsieh
Mario Hofmann
Source :
Nanomaterials, Vol 14, Iss 11, p 972 (2024)
Publication Year :
2024
Publisher :
MDPI AG, 2024.

Abstract

Two-dimensional (2D) materials promise advances in electronic devices beyond Moore’s scaling law through extended functionality, such as non-monotonic dependence of device parameters on input parameters. However, the robustness and performance of effects like negative differential resistance (NDR) and anti-ambipolar behavior have been limited in scale and robustness by relying on atomic defects and complex heterojunctions. In this paper, we introduce a novel device concept that utilizes the quantum capacitance of junctions between 2D materials and molecular layers. We realized a variable capacitance 2D molecular junction (vc2Dmj) diode through the scalable integration of graphene and single layers of stearic acid. The vc2Dmj exhibits NDR with a substantial peak-to-valley ratio even at room temperature and an active negative resistance region. The origin of this unique behavior was identified through thermoelectric measurements and ab initio calculations to be a hybridization effect between graphene and the molecular layer. The enhancement of device parameters through morphology optimization highlights the potential of our approach toward new functionalities that advance the landscape of future electronics.

Details

Language :
English
ISSN :
20794991
Volume :
14
Issue :
11
Database :
Directory of Open Access Journals
Journal :
Nanomaterials
Publication Type :
Academic Journal
Accession number :
edsdoj.f0b5b56fa53a4c18bde362cbefee4ccf
Document Type :
article
Full Text :
https://doi.org/10.3390/nano14110972