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CMOS Integrated Circuits for the Quantum Information Sciences

Authors :
Jens Anders
Masoud Babaie
Joseph C. Bardin
Imran Bashir
Gerard Billiot
Elena Blokhina
Shai Bonen
Edoardo Charbon
John Chiaverini
Isaac L. Chuang
Carsten Degenhardt
Dirk Englund
Lotte Geck
Loick Le Guevel
Donhee Ham
Ruonan Han
Mohamed I. Ibrahim
Daniel Kruger
Ka Meng Lei
Adrien Morel
Dennis Nielinger
Gael Pillonnet
Jeremy M. Sage
Fabio Sebastiano
Robert Bogdan Staszewski
Jules Stuart
Andrei Vladimirescu
Patrick Vliex
Sorin P. Voinigescu
Source :
IEEE Transactions on Quantum Engineering, Vol 4, Pp 1-30 (2023)
Publication Year :
2023
Publisher :
IEEE, 2023.

Abstract

Over the past decade, significant progress in quantum technologies has been made, and hence, engineering of these systems has become an important research area. Many researchers have become interested in studying ways in which classical integrated circuits can be used to complement quantum mechanical systems, enabling more compact, performant, and/or extensible systems than would be otherwise feasible. In this article—written by a consortium of early contributors to the field—we provide a review of some of the early integrated circuits for the quantum information sciences. Complementary metal--oxide semiconductor (CMOS) and bipolar CMOS (BiCMOS) integrated circuits for nuclear magnetic resonance, nitrogen-vacancy-based magnetometry, trapped-ion-based quantum computing, superconductor-based quantum computing, and quantum-dot-based quantum computing are described. In each case, the basic technological requirements are presented before describing proof-of-concept integrated circuits. We conclude by summarizing some of the many open research areas in the quantum information sciences for CMOS designers.

Details

Language :
English
ISSN :
26891808
Volume :
4
Database :
Directory of Open Access Journals
Journal :
IEEE Transactions on Quantum Engineering
Publication Type :
Academic Journal
Accession number :
edsdoj.bf230e47a01b4f4ba14222f6bef578f9
Document Type :
article
Full Text :
https://doi.org/10.1109/TQE.2023.3290593