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Promoting Ge Alloying Reaction via Heterostructure Engineering for High Efficient and Ultra‐Stable Sodium‐Ion Storage
- Source :
- Advanced Science, Vol 7, Iss 22, Pp n/a-n/a (2020)
- Publication Year :
- 2020
- Publisher :
- Wiley, 2020.
-
Abstract
- Abstract Germanium (Ge)‐based materials have been considered as potential anode materials for sodium‐ion batteries owing to their high theoretical specific capacity. However, the poor conductivity and Na+ diffusivity of Ge‐based materials result in retardant ion/electron transportation and insufficient sodium storage efficiency, leading to sluggish reaction kinetics. To intrinsically maximize the sodium storage capability of Ge, the nitrogen doped carbon‐coated Cu3Ge/Ge heterostructure material (Cu3Ge/Ge@N‐C) is developed for enhanced sodium storage. The pod‐like structure of Cu3Ge/Ge@N‐C exposes numerous active surface to shorten ion transportation pathway while the uniform encapsulation of carbon shell improves the electron transportation, leading to enhanced reaction kinetics. Theoretical calculation reveals that Cu3Ge/Ge heterostructure can offer decent electron conduction and lower the Na+ diffusion barrier, which further promotes Ge alloying reaction and improves its sodium storage capability close to its theoretical value. In addition, the uniform encapsulation of nitrogen‐doped carbon on Cu3Ge/Ge heterostructure material efficiently alleviates its volume expansion and prevents its decomposition, further ensuring its structural integrity upon cycling. Attributed to these unique superiorities, the as‐prepared Cu3Ge/Ge@N‐C electrode demonstrates admirable discharge capacity, outstanding rate capability and prolonged cycle lifespan (178 mAh g−1 at 4.0 A g−1 after 4000 cycles).
Details
- Language :
- English
- ISSN :
- 21983844
- Volume :
- 7
- Issue :
- 22
- Database :
- Directory of Open Access Journals
- Journal :
- Advanced Science
- Publication Type :
- Academic Journal
- Accession number :
- edsdoj.bef05ffeb44c3b889c4acffa56409
- Document Type :
- article
- Full Text :
- https://doi.org/10.1002/advs.202002358