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Band structure engineering of chemically tunable LnSbTe (Ln = La, Ce, Pr)

Authors :
Ashley Weiland
David G. Chaparro
Maia G. Vergniory
Elena Derunova
Jiho Yoon
Iain W. H. Oswald
Gregory T. McCandless
Mazhar Ali
Julia Y. Chan
Source :
APL Materials, Vol 7, Iss 10, Pp 101113-101113-6 (2019)
Publication Year :
2019
Publisher :
AIP Publishing LLC, 2019.

Abstract

The ZrSiS family of compounds has garnered interest as Dirac nodal-line semimetals and offers an approach to study structural motifs coupled with electronic features, such as Dirac crossings. CeSbTe, of the ZrSiS/PbFCl structure type, is of interest due to its magnetically tunable topological states. The crystal structure consists of rare earth capped square nets separating the magnetic Ce–Te layers. In this work, we report the single crystal growth, magnetic properties, and electronic structures of LnSb1−xBixTe (Ln = La, Ce, Pr; x ∼ 0.2) and CeBiTe, adopting the CeSbTe crystal structure, and the implication of tuning the electronic properties by chemical substitution.

Details

Language :
English
ISSN :
2166532X
Volume :
7
Issue :
10
Database :
Directory of Open Access Journals
Journal :
APL Materials
Publication Type :
Academic Journal
Accession number :
edsdoj.bbff326c28e743319f6caf2251f91ed8
Document Type :
article
Full Text :
https://doi.org/10.1063/1.5123396