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Design of 0.8–2.7 GHz High Power Class-F Harmonic-Tuned Power Amplifier with Parasitic Compensation Circuit

Authors :
Zhiqun Cheng
Xuefei Xuan
Huajie Ke
Guohua Liu
Zhihua Dong
Steven Gao
Source :
Active and Passive Electronic Components, Vol 2017 (2017)
Publication Year :
2017
Publisher :
Hindawi Limited, 2017.

Abstract

The design, implementation, and measurements of a high efficiency and high power wideband GaN HEMT power amplifier are presented. Package parasitic effect is reduced significantly by a novel compensation circuit design to improve the accuracy of impedance matching. An improved structure is proposed based on the traditional Class-F structure with all even harmonics and the third harmonic effectively controlled, respectively. Also the stepped-impedance matching method is applied to the third harmonic control network, which has a positive effect on the expansion bandwidth. CGH40025F power transistor is utilized to build the power amplifier working at 0.8 to 2.7 GHz, with the measured saturated output power 20–50 W, drain efficiency 52%–76%, and gain level above 10 dB. The second and the third harmonic suppression levels are maintained at −16 to −36 dBc and −16 to −33 dBc, respectively. The simulation and the measurement results of the proposed power amplifier show good consistency.

Details

Language :
English
ISSN :
08827516 and 15635031
Volume :
2017
Database :
Directory of Open Access Journals
Journal :
Active and Passive Electronic Components
Publication Type :
Academic Journal
Accession number :
edsdoj.bbbd237f24514278a6340ea0a34f55cd
Document Type :
article
Full Text :
https://doi.org/10.1155/2017/2543917