Translation Lookaside Buffer on the 65-nm STG DICE Hardened Elements

This paper presents the design of hardened translation lookaside buffer based on Spaced Transistor Groups (STG) DICE cells in 65-nm bulk CMOS technology. The resistance to impacts of single nuclear particles is achieved by spacing transistors in two groups together with transistors of the output combinational logic. The elements contain two spaced identical groups of transistors. Charge collection from particle tracks by only transistors of just one of the two groups doesn’t lead to the cell upset. The proposed logical element of matching based on the STG DICE cell for a content-addressable memory was simulated using TCAD tool. The results show the resistance to impacts of single nuclear particles with linear energy transfer (LET) values up to 70 MeV×cm2/mg. Short-term noise pulses in combinational logic of the element can be observed in the range of LET values from 20 to 70 MeV×cm2/mg.