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Nature of the metal-insulator transition in few-unit-cell-thick LaNiO3 films

Authors :
M. Golalikhani
Q. Lei
R. U. Chandrasena
L. Kasaei
H. Park
J. Bai
P. Orgiani
J. Ciston
G. E. Sterbinsky
D. A. Arena
P. Shafer
E. Arenholz
B. A. Davidson
A. J. Millis
A. X. Gray
X. X. Xi
Source :
Nature Communications, Vol 9, Iss 1, Pp 1-8 (2018)
Publication Year :
2018
Publisher :
Nature Portfolio, 2018.

Abstract

The electronic behaviour of complex oxides such as LaNiO3 depends on many intrinsic and extrinsic factors, making it challenging to identify microscopic mechanisms. Here the authors demonstrate the influence of oxygen vacancies on the thickness-dependent metal-insulator transition of LaNiO3 films.

Subjects

Subjects :
Science

Details

Language :
English
ISSN :
20411723
Volume :
9
Issue :
1
Database :
Directory of Open Access Journals
Journal :
Nature Communications
Publication Type :
Academic Journal
Accession number :
edsdoj.b500f5d5b0634a8a90d6a798dfb3a2b5
Document Type :
article
Full Text :
https://doi.org/10.1038/s41467-018-04546-5