Sheet Resistance Reduction of MoS₂ Film Using Sputtering and Chlorine Plasma Treatment Followed by Sulfur Vapor Annealing

Sheet resistance (Rsheet) reduction of a-few-layered molybdenum disulfide (MoS2) film using sputtering is investigated in this study. To enhance the carrier density, chlorine (Cl2) gas excited by inductively coupled plasma is introduced as a substitute for sulfur. To electrically activate the Cl dopants and simultaneously prevent out-diffusion of sulfur, a furnace annealing was performed in sulfur-vapor ambient. Consequently, the Rsheet in the MoS2 film with the Cl2 plasma treatment remarkably reduced by one order lower than that without one, because of the activation of Cl dopants in the MoS2 film.