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Monolithic Integration of Surface Plasmon Detector and Metal–Oxide–Semiconductor Field-Effect Transistors
- Source :
- IEEE Photonics Journal, Vol 5, Iss 4, Pp 6800609-6800609 (2013)
- Publication Year :
- 2013
- Publisher :
- IEEE, 2013.
-
Abstract
- The monolithic integration of a silicon-based plasmonic detector with metal- oxide-semiconductor field-effect transistors (MOSFETs) was demonstrated. The plasmonic detector consisted of a gold film with a nanoslit grating on a silicon substrate and was operated at a free-space wavelength of 1550 nm. The structure of the nanoslit grating was optimized by using the finite-difference time-domain method. The output current from the plasmonic detector was amplified by ~14 000 times using the monolithically integrated MOSFETs. In addition, dynamic operation of the integrated circuit was demonstrated by modulation of the intensity of a beam that was incident to the plasmonic detector.
Details
- Language :
- English
- ISSN :
- 19430655
- Volume :
- 5
- Issue :
- 4
- Database :
- Directory of Open Access Journals
- Journal :
- IEEE Photonics Journal
- Publication Type :
- Academic Journal
- Accession number :
- edsdoj.b1fdf2777b4d4390205fdbb7ba56cf
- Document Type :
- article
- Full Text :
- https://doi.org/10.1109/JPHOT.2013.2272779