Cite
Aluminum Nitride Transition Layer for Power Electronics Applications Grown by Plasma-Enhanced Atomic Layer Deposition
MLA
Heli Seppänen, et al. “Aluminum Nitride Transition Layer for Power Electronics Applications Grown by Plasma-Enhanced Atomic Layer Deposition.” Materials, vol. 12, no. 3, Jan. 2019, p. 406. EBSCOhost, https://doi.org/10.3390/ma12030406.
APA
Heli Seppänen, Iurii Kim, Jarkko Etula, Evgeniy Ubyivovk, Alexei Bouravleuv, & Harri Lipsanen. (2019). Aluminum Nitride Transition Layer for Power Electronics Applications Grown by Plasma-Enhanced Atomic Layer Deposition. Materials, 12(3), 406. https://doi.org/10.3390/ma12030406
Chicago
Heli Seppänen, Iurii Kim, Jarkko Etula, Evgeniy Ubyivovk, Alexei Bouravleuv, and Harri Lipsanen. 2019. “Aluminum Nitride Transition Layer for Power Electronics Applications Grown by Plasma-Enhanced Atomic Layer Deposition.” Materials 12 (3): 406. doi:10.3390/ma12030406.