Fabrication and characterization of high-performance photodetectors based on Au/CdS/Au and Au/Ni:CdS/Au junctions

The synthesis, characterization, and photodetector application of pure and Ni doped CdS thin films prepared by the spray pyrolysis technique are presented in this paper. Various techniques were used to analyze the thin films that had been produced. The hexagonal phase of the produced thin films is confirmed by X-ray diffraction (XRD) and FT-Raman (FTR) measurements. Scanning electron microscopy (SEM) was used to investigate the morphology of the thin film surface, revealing the development of nanograins. The energy band gaps for all of the prepared thin films were calculated to be approximately 2.4 eV. When the films were stimulated at 450 nm wavelength, a strong photoluminescence emission was seen at ∼540 ± 6 nm. The dark/photo I-V electrical performance of the developed films was observed. The fabricated Au/CdS/Au and Au/Ni:CdS/Au photodetectors were studied for recombination behavior, dark and photo surface resistivity, and photosensitivity. Interestingly, the dark surface resistivity was found to be greater compared to the photo-resistivity. When the light intensity was increased to 1450 Lux, the photosensitivity improves from 10% to 35%. These findings indicate that the fabricated CdS/Ni:CdS films-based photodetectors are suitable for optoelectronic devices.