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Near-ideal van der Waals rectifiers based on all-two-dimensional Schottky junctions
- Source :
- Nature Communications, Vol 12, Iss 1, Pp 1-10 (2021)
- Publication Year :
- 2021
- Publisher :
- Nature Portfolio, 2021.
-
Abstract
- Here, a defect healing method is used to tune the height and width of the Schottky barrier at the interface between 2D metals and 2D semiconductors, leading to the realization of van der Waals rectifiers with enhanced performance.
- Subjects :
- Science
Subjects
Details
- Language :
- English
- ISSN :
- 20411723
- Volume :
- 12
- Issue :
- 1
- Database :
- Directory of Open Access Journals
- Journal :
- Nature Communications
- Publication Type :
- Academic Journal
- Accession number :
- edsdoj.9a0fea19d904002a20ade4e1b3424d2
- Document Type :
- article
- Full Text :
- https://doi.org/10.1038/s41467-021-21861-6