An Improved Understanding of Chalcopyrite Leaching Mechanisms: The Influence of Anisotropic Crystal Planes

Chalcopyrite (CuFeS2) particles, exposing anisotropic crystal planes during the grinding process, possess comprehensive surface properties that affect their leaching behaviors. In order to investigate the influence of anisotropic crystal planes on the leaching mechanisms, CuFeS2 particles with anisotropic crystal planes were produced by employing three-head laboratory grinder mill (TM), rod mill (RM), and ball mill (BM) and were then leached in a sulfuric acid solution at pH = 1. Based on the XRD, SEM, XPS, and simulation results, (112), (102), (312), (110), (116), (100), and (001) planes were mainly exposed on the CuFeS2 surface during the crushing and grinding process. In addition, fewer (112), (102), (312), and (110) planes but more (116), (100), and (001) planes were exposed on the CuFeS2 samples in the TM method than in the RM and BM methods. Since the leaching rates were in the order of (001) > (100) > (116) > (110) > (312) > (102) > (112) planes, the Cu extractions followed an order of TM > RM > BM. This study, therefore, provides an excellent theoretical basis for the effect of anisotropic crystal planes on CuFeS2 leaching, further improving the understanding of CuFeS2 leaching mechanisms.