Back to Search Start Over

Carbon doping induced Ge local structure change in as-deposited Ge2Sb2Te5 film by EXAFS and Raman spectrum

Authors :
Tao Li
Liangcai Wu
Xinglong Ji
Yonghui Zheng
Guangyu Liu
Zhitang Song
Jianjun Shi
Min Zhu
Sannian Song
Songlin Feng
Source :
AIP Advances, Vol 8, Iss 2, Pp 025201-025201-7 (2018)
Publication Year :
2018
Publisher :
AIP Publishing LLC, 2018.

Abstract

The local structure change of Ge induced by carbon doping in as-deposited Ge2Sb2Te5 films were studied by extended X-ray absorption fine structure and Raman spectrum. Ge-C bonds are formed at the expense of reducing the coordination of Ge-Ge and Ge-Te bonds, and make the local structure of Ge to be a well-defined tetrahedral geometry, which increases the rigidity of amorphous network and reduces the number of ABAB rings, thus the crystallization temperature of carbon-doped Ge2Sb2Te5 (CGST) films are enhanced. The reduced proportion of the tetrahedral units GeTe4−nGen (n = 1, 2) caused by carbon doping accounts for the weaker Raman peak intensity at ∼124 cm−1 in CGST films. Meanwhile, the impact of doping carbon on the crystalline structure of CGST films were investigated by high resolution transmission electron microscope.

Subjects

Subjects :
Physics
QC1-999

Details

Language :
English
ISSN :
21583226
Volume :
8
Issue :
2
Database :
Directory of Open Access Journals
Journal :
AIP Advances
Publication Type :
Academic Journal
Accession number :
edsdoj.97ef40ac71614765b95d8b512e5a1756
Document Type :
article
Full Text :
https://doi.org/10.1063/1.5020614