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Carbon doping induced Ge local structure change in as-deposited Ge2Sb2Te5 film by EXAFS and Raman spectrum
- Source :
- AIP Advances, Vol 8, Iss 2, Pp 025201-025201-7 (2018)
- Publication Year :
- 2018
- Publisher :
- AIP Publishing LLC, 2018.
-
Abstract
- The local structure change of Ge induced by carbon doping in as-deposited Ge2Sb2Te5 films were studied by extended X-ray absorption fine structure and Raman spectrum. Ge-C bonds are formed at the expense of reducing the coordination of Ge-Ge and Ge-Te bonds, and make the local structure of Ge to be a well-defined tetrahedral geometry, which increases the rigidity of amorphous network and reduces the number of ABAB rings, thus the crystallization temperature of carbon-doped Ge2Sb2Te5 (CGST) films are enhanced. The reduced proportion of the tetrahedral units GeTe4−nGen (n = 1, 2) caused by carbon doping accounts for the weaker Raman peak intensity at ∼124 cm−1 in CGST films. Meanwhile, the impact of doping carbon on the crystalline structure of CGST films were investigated by high resolution transmission electron microscope.
Details
- Language :
- English
- ISSN :
- 21583226
- Volume :
- 8
- Issue :
- 2
- Database :
- Directory of Open Access Journals
- Journal :
- AIP Advances
- Publication Type :
- Academic Journal
- Accession number :
- edsdoj.97ef40ac71614765b95d8b512e5a1756
- Document Type :
- article
- Full Text :
- https://doi.org/10.1063/1.5020614