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Novel High Holding Voltage SCR with Embedded Carrier Recombination Structure for Latch-up Immune and Robust ESD Protection
- Source :
- Nanoscale Research Letters, Vol 14, Iss 1, Pp 1-7 (2019)
- Publication Year :
- 2019
- Publisher :
- SpringerOpen, 2019.
-
Abstract
- Abstract A novel CMOS-process-compatible high-holding voltage silicon-controlled rectifier (HHV-SCR) for electrostatic discharge (ESD) protection is proposed and demonstrated by simulation and transmission line pulse (TLP) testing. The newly introduced hole (or electron) recombination region H-RR (or E-RR) not only recombines the minority carrier in parasitic PNP (or NPN) transistor base by N+ (or P+) layer, but provides the additional recombination to eliminate the surface avalanche carriers by newly added P+ (or N+) layer in H-RR (or E-RR), which brings about a further improvement of holding voltage (V h). Compared with the measured V h of 1.8 V of low-voltage triggered silicon-controlled rectifier (LVTSCR), the V h of HHV-SCR can be increased to 8.1 V while maintaining a sufficiently high failure current (I t2 > 2.6 A). An improvement of over four times in the figure of merit (FOM) is achieved.
Details
- Language :
- English
- ISSN :
- 19317573 and 1556276X
- Volume :
- 14
- Issue :
- 1
- Database :
- Directory of Open Access Journals
- Journal :
- Nanoscale Research Letters
- Publication Type :
- Academic Journal
- Accession number :
- edsdoj.9788482badf545709185ceb2ae7d5f5a
- Document Type :
- article
- Full Text :
- https://doi.org/10.1186/s11671-019-3017-8