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Enhancing the Stability and Mobility of TFTs via Indium–Tungsten Oxide and Zinc Oxide Engineered Heterojunction Channels Annealed in Oxygen Ambient

Authors :
Seong-Hwan Lim
Dong-Gyun Mah
Won-Ju Cho
Source :
Nanomaterials, Vol 14, Iss 15, p 1252 (2024)
Publication Year :
2024
Publisher :
MDPI AG, 2024.

Abstract

This study demonstrates a significant enhancement in the performance of thin-film transistors (TFTs) in terms of stability and mobility by combining indium–tungsten oxide (IWO) and zinc oxide (ZnO). IWO/ZnO heterojunction structures were fabricated with different channel thickness ratios and annealing environments. The IWO (5 nm)/ZnO (45 nm) TFT, annealed in O2 ambient, exhibited a high mobility of 26.28 cm2/V·s and a maximum drain current of 1.54 μA at a drain voltage of 10 V, outperforming the single-channel ZnO TFT, with values of 3.8 cm2/V·s and 28.08 nA. This mobility enhancement is attributed to the formation of potential wells at the IWO/ZnO junction, resulting in charge accumulation and improved percolation conduction. The engineered heterojunction channel demonstrated superior stability under positive and negative gate bias stresses compared to the single ZnO channel. The analysis of O 1s spectra showed OI, OII, and OIII peaks, confirming the theoretical mechanism. A bias temperature stress test revealed superior charge-trapping time characteristics at temperatures of 25, 55, and 85 °C compared with the single ZnO channel. The proposed IWO/ZnO heterojunction channel overcomes the limitations of the single ZnO channel and presents an attractive approach for developing TFT-based devices having excellent stability and enhanced mobility.

Details

Language :
English
ISSN :
20794991
Volume :
14
Issue :
15
Database :
Directory of Open Access Journals
Journal :
Nanomaterials
Publication Type :
Academic Journal
Accession number :
edsdoj.9726267ea43f42a0a7369f6f436c4677
Document Type :
article
Full Text :
https://doi.org/10.3390/nano14151252