Electrically Injected Hybrid Organic/Inorganic III-Nitride White Light-Emitting Diodes Based on Rubrene/(InGaN/GaN) Multiple-Quantum-Wells P-N Junction

It is known that the commercialized white light-emitting diodes (WLEDs) depend on phosphor conversion, which is limited by the unbalanced carrier injection in multiple quantum wells (MQWs) and low down-conversion efficiency. To solve these problems, hybrid organic/inorganic III-nitride WLEDs were designed and fabricated based on Rubrene/(InGaN/GaN) MQWs p-n junction. In such new structure, Rubrene can act as yellow-red emitter and play an important role in hole transport layer owing to its high carrier mobility. By optimizing the hybrid LED structure, the charge balance and recombination zone in radiative region were significantly improved. In this work, the optimal hybrid WLED with color coordinates of (0.31, 0.33) shows a maximum current efficiency of 15.22 cd/A with excellent long lifetime stability. The hybrid WLEDs based on organic/inorganic p-n junction were demonstrated with a good performance, which provides an attractive route to achieve high performance phosphor-free WLED sources for microdisplay or large-area WLED applications.