A comparative study of optical property on unintentionally doped and Sn-Doped β-Ga2O3 crystals by EFG method with a cylindrical Ir die

In this work, we carried out a comparative study of optical property on unintentionally doped and Sn-doped β-Ga2O3 crystals by edge-defined film-fed growth (EFG) method with a cylindrical iridium (Ir) die. The non-polarized Raman spectra showed the anisotropy in Raman peak position and intensity for three different planes (i.e., (100), (010) and (001)) of β-Ga2O3 crystals, independent of the Sn dopant. A difference in the Raman spectra between the unintentionally doped and Sn-doped β-Ga2O3 crystals was observed in the (001) plane. The strong in-plane anisotropy of the monoclinic β-Ga2O3 crystal related to the crystallographic orientation was demonstrated by the angle-resolved polarized Raman spectroscopy. The Sn dopant cannot change the optical transmittance and bandgap values of the unintentionally doped and Sn-doped β-Ga2O3 crystals with the (100), (010) and (001) orientations. However, the Sn-doped β-Ga2O3 crystal with the (010) orientation showed the higher valence band maximum and lower surface barrier height values. The X-ray photoelectron spectroscopy of the unintentionally doped and Sn-doped β-Ga2O3 crystals with the (010) orientation was also measured, which showed no obvious difference. The different luminescence centers and level of electron ionization of the unintentionally doped and Sn-doped β-Ga2O3 crystals were observed by the cathodoluminescence spectroscopy and electron paramagnetic resonance, respectively. Based on the comprehensive comparison, it can be concluded that the anisotropy in optical property of the unintentionally doped and Sn-doped β-Ga2O3 crystals with (100), (010) and (001) orientations apparently exist.