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Bi-Distance Approach to Determine the Topological Invariants of Silicon Carbide
- Source :
- Baghdad Science Journal, Vol 21, Iss 1 (2024)
- Publication Year :
- 2024
- Publisher :
- College of Science for Women, University of Baghdad, 2024.
-
Abstract
- The use of silicon carbide is increasing significantly in the fields of research and technology. Topological indices enable data gathering on algebraic graphs and provide a mathematical framework for analyzing the chemical structural characteristics. In this paper, well-known degree-based topological indices are used to analyze the chemical structures of silicon carbides. To evaluate the features of various chemical or non-chemical networks, a variety of topological indices are defined. In this paper, a new concept related to the degree of the graph called "bi-distance" is introduced, which is used to calculate all the additive as well as multiplicative degree-based indices for the isomer of silicon carbide, Si2C3-1[t, h]. The term "bi-distance" is derived from the concepts of degree and distance in such a way that second distance can be used to calculate degree-based topological indices.
Details
- Language :
- Arabic, English
- ISSN :
- 20788665 and 24117986
- Volume :
- 21
- Issue :
- 1
- Database :
- Directory of Open Access Journals
- Journal :
- Baghdad Science Journal
- Publication Type :
- Academic Journal
- Accession number :
- edsdoj.8ac47e70d2c462c933672c814590ba2
- Document Type :
- article
- Full Text :
- https://doi.org/10.21123/bsj.2023.8178