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Improving the performances of oxide phototransistors using a mechanochemically treated porous visible-light absorption layer
- Source :
- Journal of Information Display, Vol 21, Iss 4, Pp 217-222 (2020)
- Publication Year :
- 2020
- Publisher :
- Taylor & Francis Group, 2020.
-
Abstract
- In this research, the use of indium gallium zinc oxide (IGZO) thin-film transistors (TFTs) with a porous oxide layer (POL) resulting from the mechanochemical treatment of spin-coated oxide films is suggested for the detection of visible light. Mechanochemical treatment is a new technique that uses cellophane tape to induce the selective formation of hydrophobic dots on the surface of the a-IGZO. These dots interfere with the deposition of the film during spin coating, resulting in pore formation. The IGZO TFT with a POL exhibits 341.32 A/W photoresponsivity, 1.10 × 106 photosensitivity, and 4.54 × 1010 Jones detectivity under 532 nm light illumination.
Details
- Language :
- English
- ISSN :
- 15980316 and 21581606
- Volume :
- 21
- Issue :
- 4
- Database :
- Directory of Open Access Journals
- Journal :
- Journal of Information Display
- Publication Type :
- Academic Journal
- Accession number :
- edsdoj.88f3cabafc4846fab3cca22d8ebe6d1d
- Document Type :
- article
- Full Text :
- https://doi.org/10.1080/15980316.2019.1708820