A mathemetical model of the charge accumulation and the spectrum formation in detectors on the basis of CdTe (CdZnTe) at the gamma-quanta irradiation

Authors :: A.A. Smirnov
I.A. Kaplunov
A.A. Ol’nev
A.N. Nikiforova
Source :: Физико-химические аспекты изучения кластеров, наноструктур и наноматериалов, Iss 9, Pp 465-474 (2017)
Publication Year :: 2017
Publisher :: Tver State University, 2017.
Abstract: The features of spectrum formation in CdTe (CdZnTe) detectors under gamma quanta radiation are presented. The main characteristics of a semiconductor detector, i.e. the energy resolution and the registration efficiency, are determined. The results can be used as a basis for physical and mathematical models of operation of CdTe (CdZnTe) semiconductor detectors for registration of gamma- and x-ray radiation over a wide energy range.

Subjects :: semiconductor detectors
cadmium telluride
Physical and theoretical chemistry
QD450-801

Language :: Russian
ISSN :: 22264442 and 26584360
Issue :: 9
Database :: Directory of Open Access Journals
Journal :: Физико-химические аспекты изучения кластеров, наноструктур и наноматериалов
Publication Type :: Academic Journal
Accession number :: edsdoj.88633ea7879b4807af0fee591ffab9d9
Document Type :: article
Full Text :: https://doi.org/10.26456/pcascnn/2017.9.465

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