Recent Progress in Fluorinated Dielectric‐Based Organic Field‐Effect Transistors and Applications

Abstract Fluorinated dielectric‐based organic field effect transistors (OFETs) have garnered lots of attention due to some visible superiorities of the incorporation of fluorine functional groups into dielectrics, such as the hydrophobicity, chemical inertness, and low polarizability of the C─F bond for effectively impeding the charge‐trapping process and improving carrier mobility. With the efforts of material design and device optimization, high‐performance multifunctional devices using fluorinated dielectrics have been rapidly developed with the mobility exceeding 8 cm2 V−1 s−1 and the operating voltage lower than −4 V, which provides a promising opportunity for applications in memory devices, wearable electronics, and flexible sensors. On this basis, this review summarizes the recent development of fluorinated dielectric‐based OFETs and OFETs‐based organic optoelectronic devices. In addition, a brief perspective of fluorinated dielectric‐based OFETs and their future challenges is also presented.