Charge carrier mobility in the configuration restructuring divacancies in silicon

Temperature dependence of the mobility of electrons and holes in p-Si, cultivated by Czochralski method and бестигельной zone melting, after irradiation by fast neutrons reactor was considered. In the framework of the elaborated model of clusters defects the temperature dependence of the concentration of electrons and holes in silicon samples was described. It is shown that the configuration change divacancies in clusters of defects and in conducting matrix leads to increase in the height of the drift barriers and concentration long-wave phonons in conducting matrix samples of silicon.