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Ultrathin strain-gated field effect transistor based on In-doped ZnO nanobelts

Authors :
Zheng Zhang
Junli Du
Bing Li
Shuhao Zhang
Mengyu Hong
Xiaomei Zhang
Qingliang Liao
Yue Zhang
Source :
APL Materials, Vol 5, Iss 8, Pp 086111-086111-8 (2017)
Publication Year :
2017
Publisher :
AIP Publishing LLC, 2017.

Abstract

In this work, we fabricated a strain-gated piezoelectric transistor based on single In-doped ZnO nanobelt with ±(0001) top/bottom polar surfaces. In the vertical structured transistor, the Pt tip of the AFM and Au film are used as source and drain electrode. The electrical transport performance of the transistor is gated by compressive strains. The working mechanism is attributed to the Schottky barrier height changed under the coupling effect of piezoresistive and piezoelectric. Uniquely, the transistor turns off under the compressive stress of 806 nN. The strain-gated transistor is likely to have important applications in high resolution mapping device and MEMS devices.

Details

Language :
English
ISSN :
2166532X and 99595788
Volume :
5
Issue :
8
Database :
Directory of Open Access Journals
Journal :
APL Materials
Publication Type :
Academic Journal
Accession number :
edsdoj.824d939c1b064eac99595788961fbade
Document Type :
article
Full Text :
https://doi.org/10.1063/1.4986098