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Ultrathin strain-gated field effect transistor based on In-doped ZnO nanobelts
- Source :
- APL Materials, Vol 5, Iss 8, Pp 086111-086111-8 (2017)
- Publication Year :
- 2017
- Publisher :
- AIP Publishing LLC, 2017.
-
Abstract
- In this work, we fabricated a strain-gated piezoelectric transistor based on single In-doped ZnO nanobelt with ±(0001) top/bottom polar surfaces. In the vertical structured transistor, the Pt tip of the AFM and Au film are used as source and drain electrode. The electrical transport performance of the transistor is gated by compressive strains. The working mechanism is attributed to the Schottky barrier height changed under the coupling effect of piezoresistive and piezoelectric. Uniquely, the transistor turns off under the compressive stress of 806 nN. The strain-gated transistor is likely to have important applications in high resolution mapping device and MEMS devices.
- Subjects :
- Biotechnology
TP248.13-248.65
Physics
QC1-999
Subjects
Details
- Language :
- English
- ISSN :
- 2166532X and 99595788
- Volume :
- 5
- Issue :
- 8
- Database :
- Directory of Open Access Journals
- Journal :
- APL Materials
- Publication Type :
- Academic Journal
- Accession number :
- edsdoj.824d939c1b064eac99595788961fbade
- Document Type :
- article
- Full Text :
- https://doi.org/10.1063/1.4986098