Back to Search
Start Over
Electronic and Optical Properties of Dislocations in Silicon
- Source :
- Crystals, Vol 6, Iss 7, p 74 (2016)
- Publication Year :
- 2016
- Publisher :
- MDPI AG, 2016.
-
Abstract
- Dislocations exhibit a number of exceptional electronic properties resulting in a significant increase of the drain current of metal-oxide-semiconductor field-effect transistors (MOSFETs) if defined numbers of these defects are placed in the channel. Measurements on individual dislocations in Si refer to a supermetallic conductivity. A model of the electronic structure of dislocations is proposed based on experimental measurements and tight binding simulations. It is shown that the high strain level on the dislocation core—exceeding 10% or more—causes locally dramatic changes of the band structure and results in the formation of a quantum well along the dislocation line. This explains experimental findings (two-dimensional electron gas and single-electron transitions). The energy quantization within the quantum well is most important for supermetallic conductivity.
Details
- Language :
- English
- ISSN :
- 20734352
- Volume :
- 6
- Issue :
- 7
- Database :
- Directory of Open Access Journals
- Journal :
- Crystals
- Publication Type :
- Academic Journal
- Accession number :
- edsdoj.7f271aedfbc94b97bd7e4f95477d6c8b
- Document Type :
- article
- Full Text :
- https://doi.org/10.3390/cryst6070074