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Internal Friction and Young's Modulus Measurements on SiO2 and Ta2O5 Films Done with an Ultra-High Q Silicon-Wafer Suspension
- Source :
- Archives of Metallurgy and Materials, Vol 60, Iss 1, Pp 365-370 (2015)
- Publication Year :
- 2015
- Publisher :
- Polish Academy of Sciences, 2015.
-
Abstract
- In order to study the internal friction of thin films a nodal suspension system called GeNS (Gentle Nodal Suspension) has been developed. The key features of this system are: i) the possibility to use substrates easily available like silicon wafers; ii) extremely low excess losses coming from the suspension system which allows to measure Q factors in excess of 2×108 on 3” diameter wafers; iii) reproducibility of measurements within few percent on mechanical losses and 0.01% on resonant frequencies; iv) absence of clamping; v) the capability to operate at cryogenic temperatures. Measurements at cryogenic temperatures on SiO2 and at room temperature only on Ta2O5 films deposited on silicon are presented.
Details
- Language :
- English
- ISSN :
- 23001909
- Volume :
- 60
- Issue :
- 1
- Database :
- Directory of Open Access Journals
- Journal :
- Archives of Metallurgy and Materials
- Publication Type :
- Academic Journal
- Accession number :
- edsdoj.7b108c3ff3a24384abd75699ab448c0a
- Document Type :
- article
- Full Text :
- https://doi.org/10.1515/amm-2015-0060