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Recovery of Silicon Kerf Through Oxidative Cleaning and Drying Process

Authors :
Marion Chevallier
Jean-Baptiste Antoine
Francis Marchitto
Yoann Doré
Yun Luo
Yohan Parsa
Source :
SiliconPV Conference Proceedings, Vol 2 (2025)
Publication Year :
2025
Publisher :
TIB Open Publishing, 2025.

Abstract

High quantity of slurries, kerf, are generated during ingot wafering and represent up to 40% of the silicon in weight. The highly pure silicon contained in kerf is contaminated with organics, metal impurities, water and an oxide layer. The recovery of the silicon could be an efficient way to reduce costs in the production of solar panels through material and energy savings. At high temperatures, organic contamination causes the formation of silicon carbide species that are difficult to segregate during kerf remelting into a pure silicon ingot. Also, during the fusion of silicon, temperatures up to 1500°C are reached and the mixture of silicon and water forms oxides and gases that reduce production yields and affect melting conditions. For these reason, purification and drying steps are required to ensure proper silicon raw material for remelting into ingots. So far, approaches using strong acidic or organic solvent are used to reduce contamination by organic compounds. In this study, more environmentally friendly processes were applied on authentic kerf waste to purify and dry silicon, to make it suitable as raw material for silicon ingot preparation. The amount of water and organic compounds were monitored along the process steps. Using aqueous oxidative processes in combination with filtration, kerf was cleaned and a total carbon reduction of at least 30% was observed. The control of humidity enables the convenient conditioning of purified kerf and effective drying reduced the moisture content to less than 5% wt.

Details

Language :
English
ISSN :
29402123
Volume :
2
Database :
Directory of Open Access Journals
Journal :
SiliconPV Conference Proceedings
Publication Type :
Academic Journal
Accession number :
edsdoj.7b0ab78fdedf48759fb1bb872c51b18e
Document Type :
article
Full Text :
https://doi.org/10.52825/siliconpv.v2i.1301