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Enhanced Transparency and Resistive Switching Characteristics in AZO/HfO2/Ti RRAM Device via Post Annealing Process
- Source :
- Inorganics, Vol 12, Iss 12, p 299 (2024)
- Publication Year :
- 2024
- Publisher :
- MDPI AG, 2024.
-
Abstract
- As interest in transparent electronics increases, ensuring the reliability of transparent RRAM (T-RRAM) devices, which can be used to construct transparent electronics, has become increasingly important. However, defects and traps within these T-RRAM devices can degrade their reliability. In this study, we investigated the improvement of transparency and reliability of T-RRAM devices with an AZO/HfO2/Ti structure through rapid thermal annealing (RTA) at 450 °C for 60 s in a nitrogen atmosphere. The device without RTA exhibited a low transmittance of 30%, whereas the device with RTA showed a significantly higher transmittance of over 75%. Furthermore, the device operated at lower current levels after RTA, which resulted in a reduction in its operating voltages, and the forming, setting, and reset voltages changed from 3.3, 2.4, and −5.1 V, respectively, to 2, 1, and −2.7 V. This led to an improvement in the endurance characteristics of the device, which thereby suggests that these improvements can be attributed to a reduction in the defects and trap density within the T-RRAM device caused by RTA.
Details
- Language :
- English
- ISSN :
- 23046740
- Volume :
- 12
- Issue :
- 12
- Database :
- Directory of Open Access Journals
- Journal :
- Inorganics
- Publication Type :
- Academic Journal
- Accession number :
- edsdoj.7ac6ac42a3e947119f20a87344dff52e
- Document Type :
- article
- Full Text :
- https://doi.org/10.3390/inorganics12120299