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Bottom–Up Electrodeposition of Large-Scale Nanotwinned Copper within 3D Through Silicon Via
- Source :
- Materials, Vol 11, Iss 2, p 319 (2018)
- Publication Year :
- 2018
- Publisher :
- MDPI AG, 2018.
-
Abstract
- This paper is the first to report a large-scale directcurrent electrodeposition of columnar nanotwinned copper within through silicon via (TSV) with a high aspect ratio (~4). With this newly developed technique, void-free nanotwinned copper array could be fabricated in low current density (30 mA/cm2) and convection conditions (300 rpm), which are the preconditions for copper deposition with a uniform deep-hole microstructure. The microstructure of a whole cross-section of deposited copper array was made up of (111) orientated columnar grains with parallel nanoscale twins that had thicknesses of about 22 nm. The hardness was also uniform along the growth direction, with 2.34 and 2.68 GPa for the top and bottom of the TSV, respectively. The gelatin additive is also first reported hereas a key factor in forming nanoscale twins by adsorbing on the cathode surface, in order to enhance the overpotential for cathodic reaction during the copper deposition process.
- Subjects :
- large-scale electrodeposition
nanotwinned copper
through silicon via
gelatin adsorption
Technology
Electrical engineering. Electronics. Nuclear engineering
TK1-9971
Engineering (General). Civil engineering (General)
TA1-2040
Microscopy
QH201-278.5
Descriptive and experimental mechanics
QC120-168.85
Subjects
Details
- Language :
- English
- ISSN :
- 19961944
- Volume :
- 11
- Issue :
- 2
- Database :
- Directory of Open Access Journals
- Journal :
- Materials
- Publication Type :
- Academic Journal
- Accession number :
- edsdoj.721fec7ffc4c43d3b8ac75bc9e299a46
- Document Type :
- article
- Full Text :
- https://doi.org/10.3390/ma11020319