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Effects of O2/Ar Ratio on Preparation and Dielectric Properties of CaZrO3 Films by Radio Frequency (RF) Magnetron Sputtering
- Source :
- Materials, Vol 17, Iss 5, p 1120 (2024)
- Publication Year :
- 2024
- Publisher :
- MDPI AG, 2024.
-
Abstract
- CaZrO3 (CZO) thin films were deposited on Pt/Ti/SiO2/Si substrates at 450 °C by radio-frequency magnetron sputtering technology. The microstructures and dielectric properties of CZO thin films were investigated. X-ray diffraction analysis reveals that the perovskite orthogonal CZO phase would be promoted by a higher O2 partial pressure in the flow ratio of O2/Ar after thin films were annealed at 700 °C for 3 h in air. The films prepared under the flow ratio of O2/Ar (20:40, 30:40 and 40:40) show the main perovskite crystal phase of CaZrO3 with a small amount of Ca0.2Zr0.8O1.8. The main crystal phase was Ca0.2Zr0.8O1.8 when the film was deposited under an O2/Ar ratio of 40:10. The annealed film with a 40:40 O2/Ar ratio exhibits a dielectric performance with a high dielectric constant (εr) of 25 at 1 MHz, a temperature coefficient of permittivity of not more than 122.7 ppm/°C from 0 °C to 125 °C, and a low leakage current density of about 2 × 10−7 A/cm2 at 30 V with an ohmic conduction mechanism.
- Subjects :
- CaZrO3 thin films
RF magnetron sputtering
annealing
dielectric properties
O2/Ar flow ratio
micro morphology
Technology
Electrical engineering. Electronics. Nuclear engineering
TK1-9971
Engineering (General). Civil engineering (General)
TA1-2040
Microscopy
QH201-278.5
Descriptive and experimental mechanics
QC120-168.85
Subjects
Details
- Language :
- English
- ISSN :
- 19961944
- Volume :
- 17
- Issue :
- 5
- Database :
- Directory of Open Access Journals
- Journal :
- Materials
- Publication Type :
- Academic Journal
- Accession number :
- edsdoj.7085f0208df742c2a04d5f59e024b76b
- Document Type :
- article
- Full Text :
- https://doi.org/10.3390/ma17051120