Back to Search Start Over

Electronic structures of GeSi nanoislands grown on pit-patterned Si(001) substrate

Authors :
Han Ye
Zhongyuan Yu
Source :
AIP Advances, Vol 4, Iss 11, Pp 117104-117104-10 (2014)
Publication Year :
2014
Publisher :
AIP Publishing LLC, 2014.

Abstract

Patterning pit on Si(001) substrate prior to Ge deposition is an important approach to achieve GeSi nanoislands with high ordering and size uniformity. In present work, the electronic structures of realistic uncapped pyramid, dome, barn and cupola nanoislands grown in {105} pits are systematically investigated by solving Schrödinger equation for heavy-hole, which resorts to inhomogeneous strain distribution and nonlinear composition-dependent band parameters. Uniform, partitioned and equilibrium composition profile (CP) in nanoisland and inverted pyramid structure are simulated separately. We demonstrate the huge impact of composition profile on localization of heavy-hole: wave function of ground state is confined near pit facets for uniform CP, at bottom of nanoisland for partitioned CP and at top of nanoisland for equilibrium CP. Moreover, such localization is gradually compromised by the size effect as pit filling ratio or pit size decreases. The results pave the fundamental guideline of designing nanoislands on pit-patterned substrates for desired applications.

Subjects

Subjects :
Physics
QC1-999

Details

Language :
English
ISSN :
21583226
Volume :
4
Issue :
11
Database :
Directory of Open Access Journals
Journal :
AIP Advances
Publication Type :
Academic Journal
Accession number :
edsdoj.6c523c6b9340f9bd4a3c9f5a506ebe
Document Type :
article
Full Text :
https://doi.org/10.1063/1.4901179