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Heteroepitaxially grown homojunction gallium oxide PN diodes using ion implantation technologies
- Source :
- Materials Today Advances, Vol 22, Iss , Pp 100499- (2024)
- Publication Year :
- 2024
- Publisher :
- Elsevier, 2024.
-
Abstract
- Although advancements in n- and p-doping of gallium oxide (Ga2O3) are underway, the realization of functional pn diodes remains elusive. Here, we present the successful fabrication of a Ga2O3 pn diode utilizing ion implantation technology. The Ga2O3 epilayers were grown on c-plane sapphire substrates by metalorganic chemical vapor deposition (MOCVD). P-type conductivity Ga2O3 epilayer, confirmed by Hall effect analysis, was achieved by phosphorus (P) ion implantation followed with a rapid thermal annealing (RTA) process. This p-Ga2O3 epilayer reveals a significant reduction in resistivity ( 3kT/q) and remained very low at 2✕10−8 A, as the diode operated at 150oC. The behavior could be due to Ga2O3 being a wide bandgap material.
- Subjects :
- Materials of engineering and construction. Mechanics of materials
TA401-492
Subjects
Details
- Language :
- English
- ISSN :
- 25900498
- Volume :
- 22
- Issue :
- 100499-
- Database :
- Directory of Open Access Journals
- Journal :
- Materials Today Advances
- Publication Type :
- Academic Journal
- Accession number :
- edsdoj.661d2bf1d63c48fda8b5fd86ed82dea0
- Document Type :
- article
- Full Text :
- https://doi.org/10.1016/j.mtadv.2024.100499